20 stern ave. springfield. new jersey 07081 u.sa 2N2920 telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 mechanical data dimensions in mm (inches) dual npn planar transistors in to77 package '^0.7110.021) ' tit 10.034) to-77 package pin 1 - collector 1 pin 4 - emitter 2 pin 2 - base 1 pin 5 - base 2 pin 3 - emitter 1 pin 6 - collector 2 absolute maximum ratings vcbo vceo vebo 'c pd pd tstg tl (tamb = 25c collector - base voltage collector - emitter voltage 1 emitter- base voltage continuous collector current total device dissipation total device dissipation storage temperature range lead temperature (soldering, unless otherwise stated) tamb = 25c derate above 25c tc = 25c derate above 25c 1 0 sec.) each side 60v 60v 6v 30 soomw 1.72mw/c 750mw 4.3mw/c total device soomw 2.86w/c 1.5w 8.6mw7c -65 to 200c 300c nj seini-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to he both accurate and reliable at the time of going {repress. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use hi semi-conductors encourages customers to verify that datasheets are current before placing orders.
electrical characteristics (tamb = 25c unless otherwise stated) parameter test conditions 1 min. typ. max. unit individual transistor characteristics v(br)cbo collector - base breakdown voltage v(br)ceo* collector - emitter breakdown voltage v(br)ebo emitter - base breakdown voltage icbo collector cut-off current 'ceo collector cut-off current ieb0 emitter cut-off current hfe dc current gain vbe base - emitter voltage vce(sat) collector - emitter saturation voltage hib small signal common - base input impedance hob small signal common - base output admittance |hfe| small signal common - base current gain cobo common - base open circuit output capacitance lc=10na ie = o lc=10ma ib = 0 !e=10ua lc = 0 vcb = 45v vce = 5v veb=5v vce = 5v vce = 5v vce = 5v vce = 5v !b=100ua vcb = 5v lc f = 1 khz vcb = 5v lc f=1khz ie = o ta= 150c ib = 0 lc = 0 lc = 10ua ta = -55c lc = 100ua lc = 1ma lc = 100ua lc = 1ma = 1ma = 1ma vce = 5v ic = 500ua f = 20mhz vcb = 5v ie = 0 f = 140khz to 1 mhz 60 60 6 150 40 225 300 25 3 2 10 2 2 600 0.70 0.35 32 1 6 v na ha na ? v ? umho ? pf * pulse test: td = 300us , 8 < 1%. parameter test conditions min. typ. max. unit transistor matching characteristics hfei static forward current gain hfe2 balance ratio |vbei - vbe2| base - emitter voltage differential |a(vbe1-vbe2)ata| base - emitter voltage differential change with temperature vce = 5v lc = 100ua see note 2. vce = 5v lc = 100ua vce = 5v lc = 10uato1ma vce = 5v lc = 100ua ta1 = 25c ta2 = -55c vce = 5v lc-100ua ta1=25c ta2 = 125c 0.9 1 3 5 0.8 1 ? mv mv
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